شبیه‌سازی گاز دوبعدی در algan / gan hemt و بررسی ولتاژ شکست آن
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شبیه‌سازی گاز دوبعدی در ALGaN / GaN HEMT و بررسی ولتاژ شکست آن
از چند ساختاره AlGaN/GaN در ادوات قدرت استفاده می‌شود بنابراین داشتن چگالی جریان و ولتاژ شکست بسیار مهم است. در قسمت اول این نوشتار، اثر پارامترهای مختلف بر چگالی گاز دوبعدی الکترون بررسی شده و بهترین حالت‌ها مشخص شده‌اند. همچنین نشان داده شده است که در بعضی حالات حفره‌ها در سطح فوقانی AlGaN جمع می‌شوند، امّا به‌علت وجود ترازهای تله در هیچ آزمایشی مشاهده نشده‌اند. در بخش بعدی اثر وجود...
full textHydrogen sensors based on AlGaN/AlN/GaN HEMT
Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...
full textLARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT
In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic package high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreements are achieved between measurement results and calculated results at different temperatures. The nonlinear capacitance models are m...
full textAnalysis of Algan/gan Based Hemt Device for Mmic Design
In this paper AlGaN/GaN heterostructure device analysis carried out which are capable for high power and frequency with performances far superior to those offered by the mainstream silicon technology and other advanced semiconductor technologies. AlGaN/GaN HEMT primarily driven by microwave wireless communication applications need. The last few years have witnessed major effort in the developme...
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Journal title:
مهندسی صنایع و مدیریتجلد ۲۰۰۷، شماره ۳۸ - ویژه مهندسی برق و کامپیوتر، صفحات ۳-۹
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